Disorder-free sputtering method on graphene

effect of geometrical defect on free vibration of a circular graphene sheet using trefftz method

because of production process and constrains conditions, circular graphene sheet may be opposed to structural defect and pin hole, respectively. some of the defects and pin hole on a circular graphene sheet can be considered as an eccentric hole on the sheet. hence, analyzing behavior of circular graphene sheet with an eccentric hole is important. free vibration of an eccentric annular graphene...

Effect of disorder on transport in graphene.

Quenched disorder in graphene is characterized by 5 constants and experiences the logarithmic renormalization even from the spatial scales smaller than the Fermi wavelength. We derive and solve renormalization group equations (RGEs) describing the system at such scales. At larger scales, we derive a nonlinear supermatrix sigma model completely describing localization and crossovers between diff...

Disorder-based graphene spintronics.

The use of the spin of the electron as the ultimate logic bit-in what has been dubbed spintronics-can lead to a novel way of thinking about information flow. At the same time single-layer graphene has been the subject of intense research due to its potential application in nanoscale electronics. While defects can significantly alter the electronic properties of nanoscopic systems, the lack of c...

Free-standing epitaxial graphene.

We report on a method to produce free-standing graphene sheets from epitaxial graphene on silicon carbide (SiC) substrate. Doubly clamped nanomechanical resonators with lengths up to 20 microm were patterned using this technique and their resonant motion was actuated and detected optically. Resonance frequencies of the order of tens of megahertz were measured for most devices, indicating that t...

On the role of disorder on graphene and graphene nanoribbon-based vertical tunneling transistors